IndiumV3, Main, Repository, bibRecord, 001866

Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

Identifieur interne : 001866 ( Main/Repository ); précédent : 001865; suivant : 001867

Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

Auteurs : RBID : Pascal:12-0318010

Descripteurs français

Pascal (Inist)
- Choix matériau, Transistor tunnel, Nanoélectronique, Effet tunnel, Courant fuite, Transistor effet champ, Courant continu, Masse effective, Bande conduction, Bande valence, Nanofil, Antimoniure d'indium, Phosphure d'indium, Composé binaire, Nitrure de gallium, Alliage Ge Si, Nanotube carbone, Germanium, 8107V, 8107D, InSb, InP, GaN.

English descriptors

KwdEn :
- Binary compound, Carbon nanotubes, Conduction band, Direct current, Effective mass, Field effect transistor, Gallium nitride, Ge-Si alloys, Germanium, Indium antimonides, Indium phosphide, Leakage current, Material selection, Nanoelectronics, Nanowires, Tunnel effect, Tunnel transistors, Valence band.

Abstract

When the physical gate length is reduced to 5 nm, direct channel tunneling dominates the leakage current for both field-effect transistors (FETs) and tunnel FETs. Therefore, a survey of materials in a nanowire geometry is performed to determine their ability to suppress the direct tunnel current through a 5 nm barrier. The materials investigated are InAs, InSb, InP, GaAs, GaN, Si, Ge, and carbon nanotubes. The tunneling effective mass gives the best indication of the relative size of the tunnel currents when comparing two different materials of any type. The indirect-gap materials, Si and Ge, give the largest tunneling masses in the conduction band, and they give the smallest conduction band tunnel currents within the range of diameters considered. Si gives the lowest overall tunnel current for both the conduction and valence bands, and therefore, it is the optimum choice for suppressing tunnel current at the 5 nm scale. A semianalytic approach to calculating tunnel current is demonstrated, which requires considerably less computation than a full-band numerical calculation.

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Pascal:12-0318010

Le document en format XML

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<author><name sortKey="Alam, Khairul" uniqKey="Alam K">Khairul Alam</name>
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<author><name sortKey="Klimeck, Gerhard" uniqKey="Klimeck G">Gerhard Klimeck</name>
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<term>Carbon nanotubes</term>
<term>Conduction band</term>
<term>Direct current</term>
<term>Effective mass</term>
<term>Field effect transistor</term>
<term>Gallium nitride</term>
<term>Ge-Si alloys</term>
<term>Germanium</term>
<term>Indium antimonides</term>
<term>Indium phosphide</term>
<term>Leakage current</term>
<term>Material selection</term>
<term>Nanoelectronics</term>
<term>Nanowires</term>
<term>Tunnel effect</term>
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<term>Nanoélectronique</term>
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<term>Courant fuite</term>
<term>Transistor effet champ</term>
<term>Courant continu</term>
<term>Masse effective</term>
<term>Bande conduction</term>
<term>Bande valence</term>
<term>Nanofil</term>
<term>Antimoniure d'indium</term>
<term>Phosphure d'indium</term>
<term>Composé binaire</term>
<term>Nitrure de gallium</term>
<term>Alliage Ge Si</term>
<term>Nanotube carbone</term>
<term>Germanium</term>
<term>8107V</term>
<term>8107D</term>
<term>InSb</term>
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<front><div type="abstract" xml:lang="en">When the physical gate length is reduced to 5 nm, direct channel tunneling dominates the leakage current for both field-effect transistors (FETs) and tunnel FETs. Therefore, a survey of materials in a nanowire geometry is performed to determine their ability to suppress the direct tunnel current through a 5 nm barrier. The materials investigated are InAs, InSb, InP, GaAs, GaN, Si, Ge, and carbon nanotubes. The tunneling effective mass gives the best indication of the relative size of the tunnel currents when comparing two different materials of any type. The indirect-gap materials, Si and Ge, give the largest tunneling masses in the conduction band, and they give the smallest conduction band tunnel currents within the range of diameters considered. Si gives the lowest overall tunnel current for both the conduction and valence bands, and therefore, it is the optimum choice for suppressing tunnel current at the 5 nm scale. A semianalytic approach to calculating tunnel current is demonstrated, which requires considerably less computation than a full-band numerical calculation.</div>
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<fC01 i1="01" l="ENG"><s0>When the physical gate length is reduced to 5 nm, direct channel tunneling dominates the leakage current for both field-effect transistors (FETs) and tunnel FETs. Therefore, a survey of materials in a nanowire geometry is performed to determine their ability to suppress the direct tunnel current through a 5 nm barrier. The materials investigated are InAs, InSb, InP, GaAs, GaN, Si, Ge, and carbon nanotubes. The tunneling effective mass gives the best indication of the relative size of the tunnel currents when comparing two different materials of any type. The indirect-gap materials, Si and Ge, give the largest tunneling masses in the conduction band, and they give the smallest conduction band tunnel currents within the range of diameters considered. Si gives the lowest overall tunnel current for both the conduction and valence bands, and therefore, it is the optimum choice for suppressing tunnel current at the 5 nm scale. A semianalytic approach to calculating tunnel current is demonstrated, which requires considerably less computation than a full-band numerical calculation.</s0>
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<fC02 i1="04" i2="3"><s0>001B80A07V</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>01</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>07</s5>
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<fC03 i1="08" i2="X" l="FRE"><s0>Masse effective</s0>
<s5>08</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>22</s5>
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<s5>22</s5>
</fC03>
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<s2>NK</s2>
<s5>23</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Indium antimonides</s0>
<s2>NK</s2>
<s5>23</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>24</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>24</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>24</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Composé binaire</s0>
<s5>25</s5>
</fC03>
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<s5>25</s5>
</fC03>
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<s5>25</s5>
</fC03>
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<s5>26</s5>
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<s5>26</s5>
</fC03>
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<s5>26</s5>
</fC03>
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<s5>27</s5>
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<s5>27</s5>
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<s5>28</s5>
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<s2>NC</s2>
<s5>29</s5>
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<s2>NC</s2>
<s5>29</s5>
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<s2>NC</s2>
<s5>29</s5>
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<s4>INC</s4>
<s5>56</s5>
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<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>InSb</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>84</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>12</s5>
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   |texte=   Material Selection for Minimizing Direct Tunneling in Nanowire Transistors
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Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

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